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| 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application High speed power switching SP-12 Features * Low on-resistance N Channel : RDS(on) 0.17, VGS = 10V , ID = 4A P Channel : RDS(on) 0.2, VGS = -10V , ID = -4A * High speed switching * High density mounting * Suitable for H-brided motor driver 1 12 1, 5, 8, 12 ; Gate 2, 4, 9, 11 ; Drain 3, 6, 7, 10 ; Source Pch 9 8 12 11 Nch 2 1 5 4 3 6 7 10 Table 1 Absolute Maximum Ratings (Ta = 25C) Ratings -------------- Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)* IDR Pch** (Tc = 25 C) Pch** Channel temperature Storage temperature Tch Tstg Nch 60 20 8 32 8 28 Pch -60 20 -8 -32 -8 Unit V V A A A W -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ 4.0 150 -55 to +150 W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** 4 Device Operation 4AM16 Table 2 Electrical Characteristics (Ta = 25C) N Channel -------------------- Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V * ID = 4 A, VGS = 4 V * S ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- 3.5 -- -- -- 0.13 0.18 5.5 10 250 2.0 0.17 0.24 -- A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK970 -- -- -- -- -- -- -- -- 400 220 60 5 45 150 85 1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 8 A, VGS = 0 IF =8 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 120 -- ns -------------------------------------------------------------------------------------- 4AM16 Table 3 Electrical Characteristics (Ta = 25C) P Channel -------------------- Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -60 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- 3.5 -- -- -- 0.15 0.20 6.0 10 250 -2.0 0.20 0.27 -- S A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -4 A, VGS = -10 V * ID = -4 A, VGS = -4 V * ID = -4 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -4 A VGS = -10 V RL = 7.5 ------------------------------------------------ -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristics curves of 2SJ172 -- -- -- -- -- -- -- -- 900 460 130 8 50 180 95 -1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -8 A, VGS = 0 IF =-8 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 185 -- ns -------------------------------------------------------------------------------------- 4AM16 Maximum Channel Dissipation Curve Pc (W) Pc (W) 6 5 4 3 2 1 Condition : Channel dissipation of each die is is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 60 Maximum Channel Dissipation Curve Condition : Channel dissipation of each die is is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation Collector Power Dissipation Collector Power Dissipation 20 10 0 25 50 75 100 125 150 Ambient Temperature Tc (C) 0 25 50 75 100 125 Case Temperature Tc (C) 150 Maximum Safe Operation Area (N-channel) 50 I D (A) I D (A) 20 10 5 D C Maximum Safe Operation Area (P-channel) -50 -20 -10 -5 D C 10 PW 10 = 0 s 10 PW 10 = 1 10 m m s 0 s s 1 s sh 10 Drain Current 2 1 0.5 0.2 0.1 0.05 0.1 s Drain Current m m s s (1 Operation in this area is limited by R DS(on) ot ) -2 -1 -0.5 -0.2 -0.1 (1 O O pe ra tio n (T c = sh Operation in this area is limited by R DS(on) pe t ra io n (T c = 25 ot ) 25 C ) C ) Ta = 25 C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Ta = 25 C -0.05 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) |
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